ild620/ 620gb / ilq620/ 620gb document number 83653 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 e c c e e c c e 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 i179053 e c c e 1 2 3 4 8 7 6 5 a/c a/c a/c a/c a/c a/c a/c a/c a/c a/c a/c a/c dual channel quad channel pb p b -free e3 optocoupler, phototransistor output, ac input (dual, quad channel) features ? identical channel to channel footprint ild620 crosses to tlp620-2 ilq620 crosses to tlp620-4 high collector-emitter voltage, bv ceo = 70 v dual and quad packages feature: - reduced board space - lower pin and parts count - better channel to channel ctr match - improved common mode rejection isolation test voltage 5300 v rms lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 bsi iec60950 iec60065 description the ild620/ ilq620 and ild620gb/ ilq620gb are multi-channel input phototransistor optocouplers that use inverse parallel gaas irled emitter and high gain npn silicon ph ototransistors pe r channel. these devices are constructed using over/under leadframe optical coupling and double molded insulation result- ing in a withstand test voltage of 5300 v rms . the led parameters and the linear ctr characteris- tics make these devices well suited for ac voltage detection. the ild/q6 20gb with its low i f quaranteed ctr cesat minimizes power dissipation of the ac volt- age detection network that is placed in series with the leds. eliminating the phot otransistor base connec- tion provides added electrical noise immunity from the transients found in many industrial control environ- ments. order information for additional information on t he available options refer to option information. part remarks ild620 ctr > 50 %, dip-8 ild620gb ctr > 100 %, dip-8 ilq620 ctr > 50 %, dip-16 ilq620gb ctr > 100 %, dip-16 ILD620-X007 ctr > 50 %, smd-8 (option 7) ild620-x009 ctr > 50 %, smd-8 (option 9) ild620gb-x009 ctr > 100 %, smd-8 (option 9) ilq620-x009 ctr > 50 %, smd-16 (option 9) ilq620gb-x009 ctr > 100 %, smd-16 (option 9)
www.vishay.com 2 document number 83653 rev. 1.4, 26-oct-04 ild620/ 620gb / ilq620/ 620gb vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit forward current i f 60 ma surge current i fsm 1.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.3 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t < 1.0 sec: i c 100 ma power dissipation p diss 150 mw derate from 25 c 2.0 mw/c parameter test condition part symbol value unit isolation test voltage t = 1.0 sec. v iso 5300 v rms package dissipation ild620 400 mw ild620gb 400 mw derate from 25 c 5.33 mw/c package dissipation ilq620 500 mw ilq620gb 500 mw derate from 25 c 6.67 mw/c creepage 7.0 mm clearance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature 2.0 mm from case bottom t sld 260 c
ild620/ 620gb / ilq620/ 620gb document number 83653 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.01.151.3 v forward current v r = 0.7 v i f 2.5 20 a capacitance v f = 0 v, f = 1.0 mhz c o 25 pf thermal resistance, junction to lead r thjl 750 k/w parameter test condition symbol min ty p. max unit collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 6.8 pf collector-emitter leakage current v ce = 24 v i ceo 10 100 na t a = 85 c, v ce = 24 v i ceo 2.0 50 a thermal resistance, junction to lead r thjl 500 k/w parameter test condition part symbol min ty p. max unit off-state collector current v f = 0.7 v, v ce = 24 v i ce(off) 1.0 10 a collector-emitter saturation voltage i f = 8.0 ma, i ce = 2.4 ma ild620 v cesat 0.4 v ilq620 v cesat 0.4 v i f = 1.0 ma, i ce = 0.2 ma ild620gb v cesat 0.4 v ilq620gb v cesat 0.4 v parameter test condition part symbol min ty p. max unit channel/channel ctr match i f = 5.0 ma, v ce = 5.0 v ctrx/ctry 1 to 1 3 to 1 ctr symmetry i ce (i f = - 5.0 ma)/ i ce (i f = + 5.0 ma) i ce(ratio) 0.5 2.0 current transfer ratio (collector-emitter saturated) i f = 1.0 ma, v ce = 0.4 v ild620 ctr cesat 60 % ilq620 ctr cesat 60 % current transfer ratio (collector-emitter) i f = 5.0 ma, v ce = 5.0 v ild620 ctr ce 50 80 600 % ilq620 ctr ce 50 80 600 % current transfer ratio (collector-emitter saturated) i f = 1.0 ma, v ce = 0.4 v ild620gb ctr cesat 30 % ilq620gb ctr cesat 30 % current transfer ratio (collector-emitter) i f = 5.0 ma, v ce = 5.0 v ild620gb ctr ce 100 200 600 % ilq620gb ctr ce 100 200 600 %
www.vishay.com 4 document number 83653 rev. 1.4, 26-oct-04 ild620/ 620gb / ilq620/ 620gb vishay semiconductors switching characteristics non-saturated saturated typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit on time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t r 20 s off time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t f 2.0 s propagation h-l i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t phl 1.1 s propagation l-h i f = 10 ma, v cc = 5.0 v, r l = 75 ? , 50 % of v pp t plh 2.5 s parameter test condition symbol min ty p. max unit on time i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v th = 1.5 v t on 4.3 s rise time i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v th = 1.5 v t r 2.8 s off time i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v th = 1.5 v t off 2.5 s fall time i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v th = 1.5 v t f 11 s propagation h-l i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v th = 1.5 v t phl 2.6 s propagation l-h i f = 10 ma, v cc = 5.0 v, r l = 1.0 k ? , v th = 1.5 v t plh 7.2 s figure 1. non-saturated switching timing iild620_01 v o v cc =5v rl = 75 ? f = 10 khz, df = 50% i f =10ma fi 2.sttdsitintimin iild620_02 v o v cc =5v r l =1k ? f = 10 khz, df = 50% i f =10ma
ild620/ 620gb / ilq620/ 620gb document number 83653 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 3. non-saturated switching timing figure 4. saturated switching timing figure 5. led forward current vs.forward voltage iild620_03 t r t f t d 50% t plh v o i f t plh t s t on t off iild620 _04 i f t r v o t d t s t f t phl t plh v th = 1.5 v iild620_05 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 60 40 20 0 -20 -40 -60 C55 c v f - led forward voltage - v i f - led forward current - ma 85 c 25 c figure 6.collector-emitte rleaage.temperature figure 7.maximumledcurrent.ambienttemperature figure 8.maximumledpowerdiipation iild620_06 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 t a - ambient temperature - c i ceo - collector-emitter - na vce=10v typical -60 -40 -20 0 20 40 60 80 100 120 100 80 60 40 0 20 ta - ambient temperature - c if - maximum led current - ma tj (max) = 100 c iild620_07 iild620_08 -60 -40 -20 0 20 40 60 80 100 200 100 0 50 ta - ambient temperature - c p led - led power - mw 150
www.vishay.com 6 document number 83653 rev. 1.4, 26-oct-04 ild620/ 620gb / ilq620/ 620gb vishay semiconductors figure 9. collector current vs. diode forward current figure 10. normalization factor for non-saturated and saturated ctr vs. i f figure 11. normalization factor for non-saturated and saturated ctr vs. i f iild620_09 1 5 10 20 100 50 10 2.5 5.0 1.0 0.5 0.1 forward current - i f ma i c - normalized collector current ild/q620 normalized to i f =10ma v ce =5v ild/q620gb iild620_10 ctrnf - normalized ctr factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 i f - led current - ma nctrce t a =50c normalized to: v ce =10v,i f = 5 ma, ctrce(sat) v ce = 0.4 v nctrce(sat) iild620_11 ctrnf - normalized ctr factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 i f - led current - ma nctrce t a =70c normalized to: v ce =10v,i f = 5 ma, ctrce(sat) v ce = 0.4 v nctrce(sat) fiure 12.normalizationfactor ornon-saturatedandaturated ctrs.i f fiure 1.ealedcurrents.ulseduration,tau fiure 14.aimumdetectorowerdissiation iild620_12 ctrnf - normalized ctr factor .1 1 10 100 2.0 1.5 1.0 0.5 0.0 i f - led current - ma nctrce t a = 100 c normalized to: v ce =10v,i f = 5 ma, ctrce(sat) v ce = 0.4 v nctrce(sat) iild620_13 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10000 1000 100 10 t - led pulse duration - s if(pk) - peak led current - ma .005 df=/t .05 .02 .01 .1 .2 .5 duty factor t iild620_14 -60 -40 -20 0 20 40 60 80 100 0 50 100 150 200 ta - ambient temperature - c p det - detector power - mw
ild620/ 620gb / ilq620/ 620gb document number 83653 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) iild620_15 .1 10 100 1000 100 10 1 .1 v ce - collector-emitter voltage - v i ce - collector current - ma rth = 500 c/w 25 c 50 c 75 c 90 c 1 figure 15. maximum collector current vs. collector voltage i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a
www.vishay.com 8 document number 83653 rev. 1.4, 26-oct-04 ild620/ 620gb / ilq620/ 620gb vishay semiconductors package dimensions in inches (mm) .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 910111213141516 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 iso method a .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
ild620/ 620gb / ilq620/ 620gb document number 83653 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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